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Sigma-Aldrich

BBL

Synonym(s):

Poly(benzimidazobenzophenanthroline)

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About This Item

Linear Formula:
(C20H6N4O2)n
CAS Number:
MDL number:
UNSPSC Code:
12352103
NACRES:
NA.23

description

Band gap: 1.9 eV

Quality Level

form

solid

orbital energy

HOMO -5.9 eV 
LUMO -4.0 eV 

OPV device performance

ITO/MEH-PPV/BBL/Al

  • Short-circuit current density (Jsc): 1.98 mA/cm2
  • Open-circuit voltage (Voc): 0.93 V
  • Fill Factor (FF): 0.47
  • Power Conversion Efficiency (PCE): 1.1 %

ITO/PPV/BBL/Al
  • Short-circuit current density (Jsc): 2.15 mA/cm2
  • Open-circuit voltage (Voc): 1.1 V
  • Fill Factor (FF): 0.5
  • Power Conversion Efficiency (PCE): 1.5 %

semiconductor properties

N-type (mobility=0.1 cm2/V·s)
P-type (mobility=0.4 cm2/V·s)

Related Categories

Application

Polymer semiconductor with n-type behavior in organic field-effect transistors (FETs) and photovoltaic cells (PVs). Processed from solutions in methanesulfonic acid.

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)


Certificates of Analysis (COA)

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Jenekhe, S.A.; Yi, S.
Applied Physics Letters, 77, 2635-2635 (2000)
Amit Babel et al.
Journal of the American Chemical Society, 125(45), 13656-13657 (2003-11-06)
Field-effect mobility of electrons as high as 0.1 cm2/(V s) is observed in n-channel thin film transistors fabricated from a solution spin-coated conjugated ladder polymer, poly(benzobisimidazobenzophenanthroline) (BBL), under ambient air conditions. This is the highest electron mobility observed to date
Efficient Solar Cells from Layered Nanostructures of Donor and Acceptor Conjugated Polymers
Alam, M. M.; Jenekhe, S. A.
Chemistry of Materials, 16, 4647-4656 (2004)
Manoj, A.G.; Narajan, K.S.
Opt. Mater., 21, 417-417 (2002)

Articles

We are pleased to offer these conjugated polymer semiconductors: p- and n-type Polymer Semiconductors.

The development of high-performance conjugated organic molecules and polymers has received widespread attention in industrial and academic research.

Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.

Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.

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