901623
Buffered oxide etchant (BOE) 6:1 with surfactant
Synonym(s):
BHF, Buffered HF
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About This Item
UNSPSC Code:
12161700
NACRES:
NA.23
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form
liquid
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General description
Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.
Application
Buffered oxide etchant (BOE) 6:1 with surfactant may be used in the oxide removal of AlGaN/GaN-based high electron mobility transistors for gate photolithography. It may also be used in a buffer oxide etchant method for the fabrication of micro biochip.
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Danger
Hazard Classifications
Acute Tox. 1 Dermal - Acute Tox. 2 Inhalation - Acute Tox. 2 Oral - Eye Dam. 1 - Skin Corr. 1A
Storage Class
6.1B - Non-combustible, acute toxic Cat. 1 and 2 / very toxic hazardous materials
wgk_germany
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
Certificates of Analysis (COA)
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Fabrication of a new micro bio chip and flow cell cytometry system using Bio-MEMS technology
Byun I, et al.
Microelectronics Journal, 39(5), 717-722 (2008)
Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy
Gonzalez-Posada F, et al.
Applied Surface Science, 253(14), 6185-6190 (2007)
Effect of passivation on AlGaN/GaN HEMT device performance
2000 IEEE international symposium on compound semiconductors, 357-363 (2000)
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