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912557

Sigma-Aldrich

di-n-butylammonium dimethylammonium lead(II) decaiodide

greener alternative

n = 3

Synonym(s):

(BA)2(MA)2Pb3I10, 2D perovskite, bis(butylammonium) bis(methyl ammonium) decaiodotriplumbate

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About This Item

Linear Formula:
(C4H9NH3)2(CH3NH3)2Pb3I10
CAS Number:
1373954-06-3
UNSPSC Code:
12352101
NACRES:
NA.23

Quality Level

100

form

crystals

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Design for Energy Efficiency
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General description

We are committed to bringing you Greener Alternative Products, which adhere to one or more of The 12 Principles of Greener Chemistry. This product has been enhanced for "Energy efficiency".

Application

2D perovskites have been used as the active material in may applications such as light emmiting diodes, phototransistors, and solar cells. Unlike 3D perovskites, these layered materials give higher moisture stability and longer device lifetimes.
Di-n-butylammonium dimethylammonium lead(II) decaiodide can be used as a component in the fabrication of perovskite materials for solar cells. It can be used in the research and development of optoelectronic devices such as solar cells, light-emitting diodes (LEDs), photodetectors and lasers.

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Danger

Hazard Classifications

Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - Repr. 1A - STOT RE 2

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

Certificates of Analysis (COA)

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Yuchuan Shao et al.
Nano letters, 17(12), 7330-7338 (2017-11-08)
Recently, two-dimensional (2D) organic-inorganic perovskites emerged as an alternative material for their three-dimensional (3D) counterparts in photovoltaic applications with improved moisture resistance. Here, we report a stable, high-gain phototransistor consisting of a monolayer graphene on hexagonal boron nitride (hBN) covered
Mingjian Yuan et al.
Nature nanotechnology, 11(10), 872-877 (2016-06-28)
Organometal halide perovskites exhibit large bulk crystal domain sizes, rare traps, excellent mobilities and carriers that are free at room temperature-properties that support their excellent performance in charge-separating devices. In devices that rely on the forward injection of electrons and
Duyen H Cao et al.
Journal of the American Chemical Society, 137(24), 7843-7850 (2015-05-29)
We report on the fabrication and properties of the semiconducting 2D (CH3(CH2)3NH3)2(CH3NH3)(n-1)Pb(n)I(3n+1) (n = 1, 2, 3, and 4) perovskite thin films. The band gaps of the series decrease with increasing n values, from 2.24 eV (CH3(CH2)3NH3)2PbI4 (n = 1)

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